SiC Warm-wall planetary principle (SiC-CVD)

The warm-wall CVD systems are used for the production of wide-bandgap semiconductors, such as silicon carbide (SiC). Their process chambers deliver the very high deposition temperatures required for WBG semiconductors. In these systems, the concept of the planetary reactor is linked to the high-temperature process. With a configuration of up to 5x200mm wafers, these systems are among the largest commercial CVD production systems for silicon carbide (SiC) worldwide. In addition to unsurpassed production capacity, the effective use of raw materials is one of the decisive advantages.

The future will drive with silicon carbide

Silicon carbide (SiC) is a semiconductor material that is ideally suited for electrical applications at high power and frequencies. Fast, lossless SiC Schottky diodes provide efficient and compact solutions for switching power supplies that are already in use in computer servers. Power rectifier modules, which can be made lighter and more compact with the help of SiC rectifiers and transistors, show a promising potential for future use in hybrid or electric vehicles.

In this system, the horizontal hot-wall reactor is combined with the multiple rotation of the substrate carriers, the so-called Gas Foil Rotation (GFR). During the coating process, the rotation of the substrate carriers produces very homogeneous layers, which are required for modern high-performance components. With the patented transfer system, the reactor can be loaded and unloaded manually with the substrate carriers. On request, a second coating chamber offers more flexibility and a higher throughput of the system.