Tim Wang appointed General Manager of AIXTRON China Ltd.

AIXTRON SE today announced that Mr. Tim Wang (汪挺), has been appointed General Manager of its subsidiary AIXTRON China Ltd.

AIXTRON wins LEDinside Aurora Award 2012

Best MOCVD Equipment Award 2012 for latest CRIUS II-XL Technology At the LEDforum 2012 in Guangzhou, China, AIXTRON SE has been awarded the 2012 LEDinside Aurora Award in the “Best MOCVD Equipment” category. With this award, the jury has honored and recognized outstanding products and performance in the LED industry. AIXTRON received its award for its latest CRIUS II-XL technology.

Plessey Orders AIXTRON CRIUS II-XL Reactor for GaN-on-Si LED Production

AIXTRON SE today announced a new MOCVD system order from Plessey Semiconductors Ltd., UK. The contract is for the first of a set of production ready CRIUS II-XL reactors in a 7x6-inch wafer configuration. The reactors are dedicated to the growth of high brightness LED wafers based on gallium nitride on silicon (GaN-on-Si) materials.

China’s Sinoepi to Produce Nitride LED Wafers with a AIXTRON CRIUS II-L System

AIXTRON SE today announced that a new customer, Sinoepi, a leading manufacturer of wafer materials in China, has placed an order for one MOCVD system, a CRIUS II-L reactor in a 69x2-inch wafer configuration. The system will be used for the production of epitaxial wafers for ultra-high brightness (UHB) gallium nitride (GaN) based LEDs.

JENOPTIK expands high power laser production with new AIXTRON system

AIXTRON SE today announced a new MOCVD systems order from existing customer JENOPTIK Diode Lab GmbH in Germany. The contract is for one AIX 2600G3 IC MOCVD reactor in a 12x4-inch wafer configuration to form the basis of a new capacity expansion for high power semiconductor laser diode epitaxial materials at JENOPTIK’s Lasers & Material Processing Division.

AIXTRON SE General Meeting 2012 - Shareholders Approve All Resolutions