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Press Releases

Here you will find latest news. You need information to produce a report on AIXTRON? We are happy to provide you with additional material.

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Period
24. July 2012 | Press Releases

AIXTRON Introduces AIX G5+

5x200 mm GaN-on-Si Technology for the AIX G5 Reactor Platform

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17. July 2012 | Press Releases

EpiGaN Successfully Starts 8-inch GaN-on-Si Development on AIXTRON Reactors

AIXTRON SE today announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration.

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10. July 2012 | Press Releases

TRUMPF Photonics Selects AIXTRON AIX 2800G4-TM System

AIXTRON SE today announced that TRUMPF Photonics, located in Princeton, NJ, USA has taken delivery of an AIXTRON AIX 2800G4-TM MOCVD reactor for high power laser applications.

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05. July 2012 | Press Releases

TECHNOTUBES Project – AIXTRON Launches New BM 300T Carbon Nanotubes System

AIXTRON SE today announced the successful conclusion of the European Commission-funded “TECHNOTUBES” (Technology for Wafer-Scale Carbon Nanotubes) project, with a demonstration of its new automated growth equipment, BM 300T. The aim of the 3-year project was to develop growth processes, automated equipment, quality control/monitoring and a variety of end-applications based on carbon nanotubes. The members of the project consortium were the University of Cambridge (coordinator), ETH Zurich, TU Denmark, TU Berlin, Fritz Haber Institute, CNR-Italy, Philips, THALES, Cambridge CMOS Sensors, IMEC, and AIXTRON.

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03. July 2012 | Press Releases

AIXTRON Ships Next Generation QXP-8300 Atomic Layer Deposition Systems to Major Korean Customer

AIXTRON SE, a major supplier of semiconductor deposition equipment and services, announced that it has received a multi-tool order for its next generation QXP-8300 ALD system from a leading Korean DRAM manufacturer. The QXP-8300 production system for sub-30 nm DRAM technology nodes will help accelerate high-volume manufacturing of the most advanced DRAM technology node available.

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26. June 2012 | Press Releases

Taiwan’s National Chung Hsing University to Use AIXTRON CCS MOCVD System for GaN-on-Silicon Research

AIXTRON SE today announced that National Chung Hsing University (NCHU), a new customer and a leading technical university in Taiwan, has placed an order for one Close Coupled Showerhead (CCS) MOCVD system in a 3x2-inch wafer configuration.

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Event calendar

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Event Date Reminder
Career Day für Frauen Date June 10, 2024 Reminder Erinnerung
Publication Half-Year Group Financial Report H1/2024 Date July 25, 2024 Reminder Erinnerung
Nacht der Unternehmen Date October 22, 2024 Reminder Erinnerung
Publication 9 Month Group Financial Report Q3/2024 Date October 31, 2024 Reminder Erinnerung

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