18. January 2011 | Press releases

Major US research center to work on graphene on silicon carbide with AIXTRON Hot-Wall tube reactor

AIXTRON SE today announced a new order for a silicon carbide (SiC) chemical vapor deposition (CVD) system from a major corporate research & development center located in the northeast of the USA.

The order comprises a VP508GFR 1x4-inch wafer configuration Hot-Wall reactor system with additional features including a Dual Tube Hot-Wall reactor with the AIXTRON patented Gas Foil Rotation for individual wafer uniformity and high temperature capability.

The company placed the order during the third quarter of 2010. Following delivery in the second quarter of 2011, the local AIXTRON support team will carry out the installation and commissioning.

Dr. Frank Wischmeyer, Vice President and Managing Director AIXTRON AB, comments, “Against the backdrop of the Nobel Prize for Physics awarded to Andre Geim and Konstantin Novoselov for Graphene, this is good timing for our forthcoming delivery. Graphene is an exciting material which possesses high electron mobility, making it a potential candidate as the channel material in future high frequency devices and integrated circuits.”

The AIXTRON VP508GFR system proven in similar research projects will be used to grow epitaxial SiC and convert the grown SiC material into mono-layers of Graphene.

For R&D and medium scale production, AIXTRON´s VP508GFR Hot-Wall tube reactor offers single wafer 4-inch and optional 6-inch capacity in a dual chamber configuration for enhanced productivity. 

AIXTRON also offers production based MOCVD platforms using its planetary type MOCVD reactors with high temperature capability for epitaxial SiC growth for 4- and 6-inch capability. 

Our registered trademarks: AIXACT®, AIXTRON®, Atomic Level Solutions®, Close Coupled Showerhead®, CRIUS®, EXP®, EPISON®, Gas Foil Rotation®, Optacap™, OVPD®, Planetary Reactor®, PVPD®, STExS®, Trijet®

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