13. September 2022 |

AIXTRON launches next Generation G10-SiC 200 mm product solution for Silicon Carbide Epitaxy

DGAP-Media / 13.09.2022 / 07:30 CET/CEST AIXTRON launches next Generation G10‑SiC 200 mm product solution for Silicon Carbide EpitaxyHerzogenrath, September 13, 2022 – AIXTRON SE launched its new G10-SiC 200 mm system for high volume manufacturing of latest generation Silicon Carbide (“SiC”) power devices

DGAP-Media / 13.09.2022 / 07:30 CET/CEST

AIXTRON launches next Generation G10SiC 200 mm product solution for Silicon Carbide Epitaxy

Herzogenrath, September 13, 2022 – AIXTRON SE launched its new G10-SiC 200 mm system for high volume manufacturing of latest generation Silicon Carbide (“SiC”) power devices on 150/200 mm SiC wafers. This high temperature CVD system, bringing innovation to the next level, was just announced at the International Conference on Silicon Carbide and Related Materials (ICSCRM), currently taking place in Davos, Switzerland. The wide-band-gap material SiC is set to become mainstream technology for efficient power electronics. SiC substantially contributes to the decarbonization of our modern society and therefore supports climate protection. Driven by the growing adoption of SiC based power semiconductors within electromobility solutions, the worldwide demand for SiC wafers is growing rapidly, further accelerated by the motivation to reduce dependency towards oil supply.

The new G10-SiC system is built on our established G5 WW C 150 mm platform and provides a flexible dual wafer size configuration of 9x150 & 6x200 mm. This feature is instrumental for the transition of the SiC industry from 150 mm (6 Inch) to 200 mm (8 Inch) wafer diameter. The new platform is built around our proven automated wafer cassette-to-cassette loading solution with high temperature wafer transfer. Combined with high growth rate process capabilities, the G10‑SiC provides best-in class wafer throughput and throughput per square meter to efficiently use the limited cleanroom space available in semiconductor fabs.

The AIXTRON G10-SiC supports a large variety of device structures incl. single and double drift layer structures meeting stringent 150 mm uniformity requirements of sigma values less than 2% for doping and thickness. The automated wafer loading reduces the risk of particle defects to a minimum, resulting in typical defect counts of < 0.02/cm2.

“This is a truly new generation high-performance system. The new dual wafer size configuration fully supports the transition from today’s 150 mm wafer technology and safeguards the investments of our customer for the future. With the highest throughput available to date in this form factor, it maximizes fabs productivity and capability to ramp even faster”, says Dr. Frank Wischmeyer, Vice President SiC of AIXTRON. At the same time, the newly developed in-situ top side wafer temperature control (TTC) solution optimizes the wafer-level process control within a batch as well as from batch-to-batch. This results in predictable high yields meeting tight production specifications at competitive cost levels”, adds Dr. Wischmeyer.

Epitaxial layer uniformity is essential to meet a high yield on device level. The high throughput of the system paired with low consumption costs per processed wafers results in the lowest cost per wafer in the industry.

“We are proud to deliver yet another solution to our partners around the globe, that combines industrial top-standard and immense climate effects. The positive feedback from our partners and customers after evaluation and production qualification of our new G10-SiC system has already generated additional customer interest”, says Dr. Felix Grawert CEO & President of AIXTRON SE.

“The G10-SiC is becoming an important building block for our customers’ worldwide production expansion, and we are committed to support this scaling with our system manufacturing, service and process support excellence.”, Dr. Grawert concludes.

Contact Persons

Guido Pickert
Vice President Investor Relations & Corporate Communications
fon +49 (2407) 9030-444
e-mail g.pickert@aixtron.com


AIXTRON SE is a leading provider of deposition equipment to the semiconductor industry. The Company was founded in 1983 and is headquartered in Herzogenrath (near Aachen), Germany, with subsidiaries and sales offices in Asia, United States and in Europe. AIXTRON´s technology solutions are used by a diverse range of customers worldwide to build advanced components for electronic and optoelectronic applications based on compound semiconductor materials. Such components are used in a broad range of innovative applications, technologies and industries. These include Laser and LED applications, display technologies, data transmission, SiC and GaN power management and conversion, communication, signaling and lighting as well as a range of other leading-edge applications.

Our registered trademarks: AIXACT®, AIXTRON®, Close Coupled Showerhead®, EXP®, EPISON®, Gas Foil Rotation®, OptacapTM, OVPD®, Planetary Reactor®, PVPD®, STExS®, TriJet®

For further information on AIXTRON (FSE: AIXA, ISIN DE000A0WMPJ6) please visit our website at: www.aixtron.com

Forward-Looking Statements

This document may contain forward-looking statements regarding the business, results of operations, financial condition and earnings outlook of AIXTRON. These statements may be identified by words such as “may”, “will”, “expect”, “anticipate”, “contemplate”, “intend”, “plan”, “believe”, “continue” and “estimate” and variations of such words or similar expressions. These forward-looking statements are based on our current assessments, expectations and assumptions, of which many are beyond control of AIXTRON, and are subject to risks and uncertainties. You should not place undue reliance on these forward-looking statements. Should these risks or uncertainties materialize, or should underlying expectations not occur or assumptions prove incorrect, actual results, performance or achievements of AIXTRON may materially vary from those described explicitly or implicitly in the relevant forward-looking statement. This could result from a variety of factors, such as actual customer orders received by AIXTRON, the level of demand for deposition technology in the market, the timing of final acceptance of products by customers, the condition of financial markets and access to financing for AIXTRON, general conditions in the market for deposition plants and macroeconomic conditions, cancellations, rescheduling or delays in product shipments, production capacity constraints, extended sales and qualification cycles, difficulties in the production process, the general development in the semi-conductor industry, increased competition, fluctuations in exchange rates, availability of public funding, fluctuations and/or changes in interest rates, delays in developing and marketing new products, a deterioration of the general economic situation and any other factors discussed in any reports or other announcements , in particular in the chapter Risks in the Annual Report, filed by AIXTRON. Any forward-looking statements contained in this document are based on current expectations and projections of the executive board based on information available the date hereof. AIXTRON undertakes no obligation to revise or update any forward-looking statements as a result of new information, future events or otherwise, unless expressly required to do so by law. 

This document is an English language translation of a document in German language. In case of discrepancies, the German language document shall prevail and shall be the valid version.

End of Media Release

Key word(s): Research/Technology

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Our registered trademarks: AIXACT®, AIXTRON®, Atomic Level Solutions®, Close Coupled Showerhead®, CRIUS®, EXP®, EPISON®, Gas Foil Rotation®, Optacap™, OVPD®, Planetary Reactor®, PVPD®, STExS®, Trijet®

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