WIN Semiconductors adds AIXTRON MOCVD reactors to boost production

AIXTRON SE today announced that WIN Semiconductors, an existing customer and a leading manufacturer of microwave devices in Taiwan, placed an order for two MOCVD systems, another AIX 2600G3 system in a 7x6-inch wafer configuration as well as its first AIX 2800G4 system in a 8x6-inch wafer configuration. It will use the systems to develop and mass produce various high performance devices.

Hualei Optoelectronics receives further AIXTRON MOCVD systems

AIXTRON SE today announced that Xiang Nang Hualei Optoelectronics Ltd, of Hunan Province, China, has ordered eight new AIXTRON MOCVD reactors to boost capacity for GaN HB LEDs. The order includes six CRIUS II reactors in a 55x2-inch wafer configuration and two AIX G5 HT 56x2-inch wafer configuration systems.

CRIUS(R) II-XL: World's most productive MOCVD reactor launched by AIXTRON

Solid state lighting research at Nanyang Technological University with AIXTRON system

AIXTRON SE today announced that Nanyang Technological University (NTU) Singapore, has received its new Close Coupled Showerhead (CCS) system. Commissioned by the local AIXTRON support team, the CCS 3x2-inch wafer configuration system is being used for research into ultra-high brightness LEDs and related material systems.

AIXTRON: Market correction and currency effects dilute result / Unscheduled demand slow-down does not derail LED lighting vision / AIXTRON exercises operational business flexibility in respo

Infineon Technologies entwickelt hocheffiziente GaN-auf-Si-HEMT-Transistoren mit AIXTRON G5-Anlage

Mit der erfolgreichen Abnahme einer 8x6-Zoll AIX G5 HT MOCVD1-Anlage im September 2011 hat AIXTRON Kunde Infineon Technologies das erste Planungsziel bei der Entwicklung seiner GaN-auf-Si2 HEMTs3 erreicht. Die neue Anlage ist zusätzlich für die Herstellung von 5x8-Zoll-Wafern optimiert.