Pressemeldungen

AIXTRON SE 14.12.2021 / 14:24 Dissemination of a Voting Rights Announcement transmitted by DGAP - a service of EQS Group AG. The issuer is solely responsible for the content of this announc

AIXTRON says YESvGaN / Epitaxy specialist AIXTRON is partner of EU research project YESvGaN / High energy efficiency and low CO2 emissions by using GaN power transistors

DGAP-Media / 14.12.2021 / 10:09 AIXTRON says YESvGaNEpitaxy specialist AIXTRON is partner of EU research project YESvGaN / High Wide-Band-Gap performance at low silicon cost / High energy efficiency and low CO2 emissions by using GaN power transistors / Range extension for electromobilityHerzogenrath/Germany,

EU project TRANSFORM: AIXTRON drives the green Economy / Establishment of a sustainable silicon carbide supply chain in Europe as part of the EU project TRANSFORM

DGAP-Media / 08.12.2021 / 11:07 EU project TRANSFORM: AIXTRON drives the green EconomyEstablishment of a sustainable silicon carbide supply chain in Europe as part of the EU project TRANSFORM / Collaboration of 34 leading specialists in SiC technology / Energy savings of up to 30% expectedHerzogenrath/Germany,

AIXTRON SE 06.12.2021 / 13:15 Dissemination of a Voting Rights Announcement transmitted by DGAP - a service of EQS Group AG. The issuer is solely responsible for the content of this announc

AIXTRON supports young academics in researching of future semiconductor quantum components / New EU doctoral program

DGAP-Media / 06.12.2021 / 09:03 AIXTRON supports young academics in researching of future semiconductor quantum componentsAIXTRON is a partner of the new EU doctoral program QUANTIMONY / Research focus is on semiconductor materials and devices containing antimony / Applications are optoelectronics,

Nexperia uses AIXTRON equipment as it enters the SiC market / AIXTRON's high temperature epitaxy technology for volume production of high performance SiC epi wafers

DGAP-Media / 02.12.2021 / 16:40 Nexperia uses AIXTRON equipment as it enters the SiC marketAIXTRON's high temperature epitaxy technology for volume production of high performance SiC epi wafers / AIX G5 WW C system meets high quality demands of SiC power electronicsHerzogenrath/Germany, December 2,