02. December 2021 |

Nexperia uses AIXTRON equipment as it enters the SiC market / AIXTRON's high temperature epitaxy technology for volume production of high performance SiC epi wafers

DGAP-Media / 02.12.2021 / 16:40 Nexperia uses AIXTRON equipment as it enters the SiC marketAIXTRON's high temperature epitaxy technology for volume production of high performance SiC epi wafers / AIX G5 WW C system meets high quality demands of SiC power electronicsHerzogenrath/Germany, December 2,


DGAP-Media / 02.12.2021 / 16:40

Nexperia uses AIXTRON equipment as it enters the SiC market

AIXTRON's high temperature epitaxy technology for volume production of high performance SiC epi wafers / AIX G5 WW C system meets high quality demands of SiC power electronics

Herzogenrath/Germany, December 2, 2021 - Nexperia, the expert in essential semiconductor, is using AIXTRON SE (FSE: AIXA, ISIN DE000A0WMPJ6) production technology to enter the high performance SiC device market. For volume production of silicon carbide epi wafers for SiC power devices, Nexperia requires consistently excellent epi wafer quality, even at high volumes. At the same time, costs in the production of SiC devices can be reduced due to the high throughput.

As one of the leading experts in the field of volume production of semiconductor devices, Nexperia plans to continuously expand its portfolio of silicon carbide devices. AIXTRON, one of the leading suppliers of deposition equipment to the semiconductor industry, meets the high-quality requirements of silicon carbide wafers for power electronics with its fully automated AIX G5 WW C platform.

The AIX G5 WW C - The Reference for SiC Material Manufacturing Technology

"Wide-band-gap semiconductors such as gallium nitride and silicon carbide have unique physical properties. They enable high power density and efficiency at lower system and operating costs. SiC technology is also now advanced enough to meet the stringent requirements for mass production of devices for modern consumer and industrial products. Therefore, it is now time for Nexperia to take our next strategic step, the expansion of our portfolio to include power semiconductor devices based on silicon carbide," says Mark Roeloffzen, General Manager of the Bipolar Discretes Group at Nexperia.

He adds: "In the future, we will also cover the value-added stage of epi-wafer production in the field of high-performance components. For this important milestone, we know that AIXTRON is the right partner for Nexperia."

For decades, AIXTRON has been working with leading institutes and industry partners worldwide to exploit the benefits of new compound semiconductor material classes such as SiC and GaN for power electronics and is also opening up the use of 200mm wafers with the latest production technologies.

AIXTRON's latest generation Planetary Reactor(R) is specifically designed to meet the very high demands of SiC power electronics. The system ensures the necessary excellent quality of the epitaxial layers on the wafers and has therefore been qualified by market leaders in silicon carbide for the production of SiC devices.

SiC power electronics for the applications of the future

"Nexperia is positioning itself at the right time in one of the most exciting growth markets in the semiconductor industry. We are pleased that Nexperia has chosen us as a partner in this important strategic step into a new market of the future. The performance characteristics of the silicon carbide and gallium nitride material classes, with their high efficiency, offer highly attractive potential for energy savings, heat reduction, weight and system size reduction, and thus lower overall system costs," says Dr. Felix Grawert, CEO and President of AIXTRON SE.

"SiC and GaN semiconductors offer higher energy efficiency in applications compared to conventional power electronics based on silicon and thus contribute significantly to lower CO2 emissions. The properties of the materials predestine them in particular for applications in electric vehicles and their charging stations, data centers or in the field of renewable energies such as solar and wind power plants," adds Dr. Felix Grawert.

At the beginning of the year, Nexperia had already started a significant investment program both in the expansion of its production capacities, and in research and development worldwide. As part of its global growth strategy, planned investments in Europe this year include production efficiency improvements and the implementation of new 200mm technologies at its European wafer fabs in Hamburg, Manchester and Newport. In Hamburg, the company is investing in new technologies for the expansion of its "wide band gap" SiC power device offering.

To download photos, please click here: AIXTRON and Nexperia

 

Contact Persons

AIXTRON SE
Guido Pickert
Vice President Investor Relations & Corporate Communications
fon +49 (2407) 9030-444
e-mail g.pickert@aixtron.com

Rita Syre
Senior PR Manager
fon +49 (2407) 9030-3665
mobile +49 (162) 269 3791
e-mail r.syre@aixtron.com

Nexperia
Petra Beekmans, Head of Communications & Branding
mobile: +31 6 137 111 41
e-mail: petra.beekmans@nexperia.com

 

About AIXTRON

AIXTRON SE is a leading provider of deposition equipment to the semiconductor industry. The Company was founded in 1983 and is headquartered in Herzogenrath (near Aachen), Germany, with subsidiaries and sales offices in Asia, United States and in Europe. AIXTRON's technology solutions are used by a diverse range of customers worldwide to build advanced components for electronic and optoelectronic applications based on compound or organic semiconductor materials. Such components are used in a broad range of innovative applications, technologies and industries. These include Laser and LED applications, display technologies, data transmission, SiC and GaN power management and conversion, communication, signaling and lighting as well as a range of other leading-edge applications.

Our registered trademarks: AIXACT(R), AIXTRON(R), Atomic Level SolutionS(R), Close Coupled Showerhead(R), CRIUS(R), Gas Foil Rotation(R), OVPD(R), Planetary Reactor(R), PVPD(R), TriJet(R)

For further information on AIXTRON (FSE: AIXA, ISIN DE000A0WMPJ6) please visit our website at: www.aixtron.com

About Nexperia

Nexperia is a leading expert in the high-volume production of essential semiconductors, components that are required by every electronic design in the world. The company's extensive portfolio includes diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs and analog & logic ICs. Headquartered in Nijmegen, the Netherlands, Nexperia annually ships more than 100 billion products, meeting the stringent standards set by the automotive industry. These products are recognized as benchmarks in efficiency - in process, size, power and performance - with industry-leading small packages that save valuable energy and space.With decades of experience in supplying to the world's leading companies, Nexperia has over 12,000 employees across Asia, Europe and the US. Nexperia, a subsidiary of Wingtech Technology Co., Ltd. (600745.SS), has an extensive IP portfolio and is certified to IATF 16949, ISO 9001, ISO 14001 and ISO 45001.

For further information on Nexperia please visit www.nexperia.com

Forward-Looking Statements AIXTRON SE

This document may contain forward-looking statements regarding the business, results of operations, financial condition and earnings outlook of AIXTRON. These statements may be identified by words such as "may", "will", "expect", "anticipate", "contemplate", "intend", "plan", "believe", "continue" and "estimate" and variations of such words or similar expressions. These forward-looking statements are based on our current assessments, expectations and assumptions, of which many are beyond control of AIXTRON, and are subject to risks and uncertainties. You should not place undue reliance on these forward-looking statements. Should these risks or uncertainties materialize, or should underlying expectations not occur or assumptions prove incorrect, actual results, performance or achievements of AIXTRON may materially vary from those described explicitly or implicitly in the relevant forward-looking statement. This could result from a variety of factors, such as actual customer orders received by AIXTRON, the level of demand for deposition technology in the market, the timing of final acceptance of products by customers, the condition of financial markets and access to financing for AIXTRON, general conditions in the market for deposition plants and macroeconomic conditions, cancellations, rescheduling or delays in product shipments, production capacity constraints, extended sales and qualification cycles, difficulties in the production process, the general development in the semi-conductor industry, increased competition, fluctuations in exchange rates, availability of public funding, fluctuations and/or changes in interest rates, delays in developing and marketing new products, a deterioration of the general economic situation and any other factors discussed in any reports or other announcements , in particular in the chapter Risks in the Annual Report, filed by AIXTRON. Any forward-looking statements contained in this document are based on current expectations and projections of the executive board based on information available the date hereof. AIXTRON undertakes no obligation to revise or update any forward-looking statements as a result of new information, future events or otherwise, unless expressly required to do so by law.

This document is an English language translation of a document in German language. In case of discrepancies, the German language document shall prevail and shall be the valid version.



End of Media Release


Issuer: AIXTRON SE
Key word(s): Enterprise

02.12.2021 Dissemination of a Press Release, transmitted by DGAP - a service of EQS Group AG.
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