Our market expertise is your recipe for success

To date, AIXTRON has delivered more than 2,000 deposition systems to customers around the world. We have also enhanced existing technologies and take pride that our comprehensive expertise and many years of experience in the deposition of complex semiconductor materials have served as a foundation for many of customers’ success.

  • Production Systems

    • Compound Semiconductors

      MOCVD

      Applying this production methodology, the source materials (which are metal-organic compounds) are transported by way of a carrier gas and gradually supplied to the reactor. A complex chemical reaction results in thin semiconductor layers. The introduced gases are of a very high purity and can be exceptionally well dosed, which enables the film growth to be precisely controlled.

      Planetary Reactor
      Close Coupled Showerhead

      Applying this technology, the process gases are introduced vertically over the entire coating surface in the reactor via the water-cooled showerhead surface. The gas flow into the reactor is designed in such a manner that the Group III and Group V gases are separated until they enter the reactor (by many small narrow tubes at the showerhead inlet). This technology ensures an unmatched level of reproducibility.

      SiC Planetary Reactor

      For semiconductor properties, Silicon carbide stands out especially when it comes to power rectifiers, as well as switches for converting and distributing electricity. The Planetary Reactor enables several 4- or 6-inch, or 200 mm SiC wafers to be coated at the same time.

    • Silicon Semiconductors

      ALD

      CVD/(PE)CVD

      Applying this methodology, the deposition of thin films takes place by means of chemical reactions, in which the wafers are exposed to a gas mixture that reacts on the wafer surface. The process can also be plasma-enhanced.

    • Organic Semiconductors

      OVPD

      Organic Vapor Phase Deposition (OVPD) is an innovative technology for the thin-film deposition of organic “small molecules,” based on the principle of gas phase transport. When combined with AIXTRON’s patented Close Coupled Showerhead technology, the process can be scaled to any degree and any substrate dimensions. Compared to conventional vapor processes, the gas phase transport allows for more precise control of the deposition rates and thus greater flexibility in manufacturing complex structures.

      PVPD

      Polymer Vapor Phase Deposition (PVPD) is a technology for the controlled gas-phase deposition and in situ cross-linking of polymer-based thin-film structures.

      When combined with AIXTRON’s patented Close Coupled Showerhead technology, the process is scalable to any degree and can be used for any substrate dimensions. Compared to conventional vapor processes, the gas phase transport allows for more precise control of the deposition rates and thus the creation of new materials through targeted copolymerization, for example.

    • Nanotechnology

      (PE)CVD

      AIXTRON‘s BM systems can operate in both thermal CVD and plasma-enhanced CVD modes, which is extremely important for controlling the structure of nanomaterials as it enables virtually all variations and morphologies of carbon nanotubes and graphene to be produced. Our systems feature fast ramp rates, automatic recipe execution, excellent uniformity and reproducibility for nanomaterial growth. The systems are based on the highly scalable showerhead concept and are available for wafer-sizes from 50mm to 300mm diameter.

  • R&D Systems

    • Compound Semiconductors

      MOCVD

      Applying this production methodology, the source materials (which are metal-organic compounds) are transported by way of a carrier gas and gradually supplied to the reactor. A complex chemical reaction results in thin semiconductor layers. The introduced gases are of a very high purity and can be exceptionally well dosed, which enables the film growth to be precisely controlled.

    • Silicon Semiconductors

      ALD

      Atomic layer deposition is a process for manufacturing ultrathin films for semiconductor components and future non-semiconductor applications.

      (PE)CVD

      Applying this methodology, the deposition of thin films takes place by means of chemical reactions, in which the wafers are exposed to a gas mixture that reacts on the wafer surface. The process can also be plasma-enhanced.

    • Organic Semiconductors

      OVPD

      Organic Vapor Phase Deposition (OVPD) is an innovative technology for the thin-film deposition of organic “small molecules,” based on the principle of gas phase transport. When combined with AIXTRON’s patented Close Coupled Showerhead technology, the process can be scaled to any degree and any substrate dimensions. Compared to conventional vapor processes, the gas phase transport allows for more precise control of the deposition rates and thus greater flexibility in manufacturing complex structures.

      PVPD

      Polymer Vapor Phase Deposition (PVPD) is a technology for the controlled gas-phase deposition and in situ cross-linking of polymer-based thin-film structures.
      When combined with AIXTRON’s patented Close Coupled Showerhead technology, the process is scalable to any degree and can be used for any substrate dimensions. Compared to conventional vapor processes, the gas phase transport allows for more precise control of the deposition rates and thus the creation of new materials through targeted copolymerization, for example.

      PECVD

      OPTACAP (TM)

      The patented OPTACAP™ technology offers an innovative plasma-enhanced CVD approach based on linear plasma sources. It provides high growth rates at very low temperatures.

      The enabling features of the proprietary source are:

      • Linear pre-activation region providing very high activation, thus resulting in high utilization of source gases and facilitating high deposition rates.
      • Unique and patent-pending microstructure of the deposited film forming a high-quality flexible encapsulation film.

      The OPTACAP™ technology achieves very high deposition rates, yielding highly productive deposition of dense inorganic film with excellent barrier capability and extraordinary flexibility.

      OPTACAP-200

    • Nanotechnology

      CVD/(PE)CVD

      AIXTRON‘s BM systems can operate in both thermal CVD and plasma-enhanced CVD modes, which is extremely important for controlling the structure of nanomaterials as it enables virtually all variations and morphologies of carbon nanotubes and graphene to be produced. Our systems feature fast ramp rates, automatic recipe execution, excellent uniformity and reproducibility for nanomaterial growth. The systems are based on the highly scalable showerhead concept and are available for wafer-sizes from 50mm to 300mm diameter.

      Flyer Graphene and 2D/1D
      Brochure BM Systems