DEPOSITION SYSTEM FOR COMPOUND SEMICONDUCTORS

AIX G5 WW

 “SiC VPE reactor with single wafer performance and batch reactor cost benefit”

Key Benefits

  • Best Epi Thickness and Doping Uniformity Control
  • High growth rate
  • Highest Yield
  • State-of-the-art SiC base processes for power device epi structures
  • Lowest Production Cost

Product Features

  • Unique true horizontal flow Planetary Reactor – Built in Best Uniformity  &  Highest Efficiency for best exhaust maintenance management
  • All SiC Coated Graphite Process Chamber – Lowest particles
  • Triple Process Gas Injection – Maxed out Process Control and Yield Optimization
  • Single Wafer Rotation – Combining batch chamber productivity with single wafer performance
  • In-situ on-wafer temperature measurement capability
  • From Q4/2018: Automated Wafer Loading  at high temperature – Boosting up wafer throughput by fast thermal cycling

Configurations

  • 12x100 mm
  • 8x150 mm

AIX G5 WW reactor module

Your contact person

Product Management

Dr. Jens Voigt

Director