Successful process start of AIXTRON 200/4 RF-S
GaN Reactor at University of Montpellier II

A new AIXTRON Gallium Nitride MOCVD system with in situ monitoring has been successfully started up at University of Montpellier II. The University of Montpellier had decided to purchase the AIXTRON 200/4 RF-S reactor due to the unsurpassed quality of Nitrides deposited in this reactor. Based on the extremely successful AIX 200/4 reactor series, this stainless steel version offers a high flexibility in the choice of in situ measurement methods. Various optical ports allow the usage of Reflectance Spectroscopy with the Filmetrics Reflectance Monitor, RAS, Pyrometry, and many other methods. On the other hand the robust design of the MOCVD System ensures reproducible and reliable operation. This was also demonstrated by the very short time needed for the start-up process of the system.

As Dr. Briot, head of the GaN team at the Semiconductor Group stated: "The reactor was finally accepted after only four days of process demonstration. During these four days of intense work, AIXTRON´s process engineer demonstrated very successfully and skillfully that the AIXTRON 200/4 RF-S was able to grow very high quality samples of GaN and GaAlN. The process for GaN was finely tuned after 3 runs using the Filmetrics in situ reflectance monitoring system. Very high quality AlGaN was obtained at the first run which was assessed by low temperature photoluminescence and reflectivity measurements. During these four days, we also could observe that the results were extremely reproducible, due to the high quality of the machine."

AIXTRON offers a wide range of epitaxial systems for MOVPE, VPE and LPE from R&D-oriented systems up to large-scale Planetary Reactor^® production systems for up to 25x4" or 9x6" wafers. AIXTRON has installed over 300 systems worldwide and is represented in over 15 countries. The company provides an extensive service and support network for maintenance as well as upgrading of its systems.