AIXTRON is pleased to announce a contract with the University of Bath, UK, for the delivery of an AIX 200/4RF-S MOCVD system for the growth of GaN and SiC based LED and LD structures.

The reactor has been ordered by ARIMA OPTOELECTRONIC CORP., Taiwan, for a close collaboration with the University of Bath. The cooperation targets the development of processes for mass production of blue and green LEDs. According to Prof. Dr. W.N. Wang, University of Bath: "Our decision to use this reactor is based on the track record of the AIX 200/4HT and AIX 200/4RF-S MOCVD reactors for the growth of GaN- and SiC-based LED and LD structures in many labs all over the world." "This is a promising step towards the production of blue and green UHB-LEDs" confirmed Steven Lee, Chairman and CEO of ARIMA.

The AIXTRON reactor design is based on a dual-flow channel reactor with pure laminar horizontal flow. This guarantees excellent wafer uniformity with very high efficiency in the use of process gases and avoids problems with sensitive flow balancing or condensation at inlet flow flanges. It, therefore, enables maximum performance with respect to interface abruptness, offers the fast heating/cooling capability required to make nitride based LEDs and also provides an additional in-situ cleaning feature and in-situ monitoring capabilities.