!!! Press Release !!!

MOCVD of SrBi2Ta2O9 in Cooperation with Symetrix Corporation

  • § Continuing progress in MOCVD of SrBi2Ta2O9 in cooperation with Symetrix Corporation, Colorado Springs, CO, USA.
  • Superior electrical properties have just been obtained 2Pr = 13 µC/cm2 at 5V with leakage current density Jl @ 10-8 A/cm² = 5V.
  • Films deposited on 6" Pt/TiOx/Si wafers with thickness uniformity 3s = 2.25 % at 180 nm.
  • An excellent step coverage of 2:1 aspect ratio (0.5 µm) was also obtained.

 

For further information please contact:

Prof. Dr. C.A. Paz de Araujo
Symetrix Corporation
5055 Mark Dabling Blvd.
Colorado Springs, CO 80918
USA
Phone: +1(719)594-6145
Fax: +1(719)598-3437
E-mail: symetrix@usa.net

Octavia Schirmer
Marketing Manager
AIXTRON AG
Kackertstr. 15 - 17
D-52072 Aachen
Germany
Phone: +49 (241) 8909-474
Fax: +49 (241) 8909-40
E-mail: info@aixtron.com
www.aixtron.com

© AIXTRON AG March 2000


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