NASA Lewis has a long history in materials science including their ongoing research to synthesize SiC layers which has focused on CVD to advance SiC electronics technology. In a move to intensify their research capabilities in this direction, NASA Lewis will use the AIX 200/4HT to advance SiC crystal growth research for high temperature electronic devices and sensors. This is the second MOCVD reactor for NASA and is scheduled to be installed at the Cleveland premises early next year.

 The AIX 200/4 HT MOCVD reactor system has been developed for the production of ultra-high uniform layered structures of SiC, III-Nitrides, III-V and II-VI semiconductors and other materials in both R & D and production. The horizontal reactor permits the handling of 2", 3" or 4" wafers. The AIXTRON design is based on a two-flow reactor with pure laminar flow guaranteeing excellent wafer uniformity with very high efficiency in the use of process gases. It also ensures ultimate performance with respect to interface abruptness and offers the fast heating/cooling capability required by NASA Lewis as well as an additional in-situ cleaning feature. Wafer rotation is provided by the patented Gas Foil Rotation^® and the reactor is available for operation up to 1200°C, with an optional extension up to 1600°C.