!!! Press Release !!! AIXTRON and the Research Centre Jülich Enter New Research Cooperation Agreement for High e Dielectra AIXTRON and the Institute for Electroceramic Materials, headed by Professor Waser, at the Research Centre Jülich, have entered into a cooperation agreement for the growth of high e materials and ferroelectrics. Under the agreement, the Research Centre Jülich will receive an AIX 2400/2600G3 reactor system from AIXTRON and in the first stage of the cooperation both parties will jointly research the growth of BST materials. As part of the agreement, the Research Centre will also function as a demonstration laboratory for AIXTRON. Highe dielectra materials are highly promising for the future of the memory chip industry. It is expected that the next generation of D-RAMs, with 1 and 4 Gb and higher capacities, will be produced using the high e material, BST. "We are very excited by this new cooperation", commented Dr. Marc Deschler, Director of Sales & Marketing at AIXTRON, "The demand for memory chips worldwide is rapidly increasing, and as it does, so too will the demand for the economic production of the raw materials - thin films for dielectrics and ferroelectrics. With our new equipment, the AIX 2400/2600G3, we have the ideal production system. Together with the excellent know-how and expertize within Professor Waser´s units at the RWTH Aachen University of Technology and at the Research Centre Jülich, we are very confident we can develop a low-cost, high yield process for these materials." The AIX 2400/2600G3 system is ideally suited for the growth of high e materials. The first MOCVD system to offer robotically controlled, cassette-to-cassette wafer-handling, the reactor is designed for high throughput, low-cost manufacturing. Processes are run on 150 mm (6") wafers and the flexibility of the system allows the process to be easily upgraded to 250 mm (10") wafers. The unique design of the AIX 2400/2600G3 Planetary Reactor® ensures homogenous composition distribution, high step coverage on structured surfaces and selective deposition capabilities. In addition, all steps of the process can be easily monitored and controlled using the latest in-situ monitoring techniques. For the first time, the AIX 2400/2600G3 reactor will be linked to a liquid delivery system for growing oxide thin films. Prof. Waser´s group will investigate the parameter space for optimized growth conditions and the electrical properties of the films. Correlations will be made between the processing conditions, the micro and nanostructure of the films and their dielectric performance. It is planned to extend the cooperation to aixACCT, the new demonstration centre at the RWTH Aachen, for routine studies and quality control as well as for the transfer of know-how on the integration for the high e films. aixACCT celebrates its opening on 8th July 1997. AIXTRON offers a wide range of epitaxial systems for MOVPE, VPE and LPE from R & D- oriented systems up to large-scale Planetary Reactor® production systems for up to 95 x 2" wafers. The company has installed over 200 systems worldwide, provides an extensive service and support network for maintenance and upgrading and is represented in 18 countries. Among AIXTRON's list of industrial clients are names such as Alcatel, AT&T, EPI, Hewlett Packard, Honeywell, IBM, Motorola, NEC, Philips, Rockwell, Samsung, Siemens and numerous Japanese corporations. AIXTRON systems have also been installed in many of the world's most renowned research institutes including JPL-CALTEC, Sandia Nat. Lab., Fraunhofer Institute, CNET and CNRS. AIXTRON is very active in advancing MOCVD technology through collaborations and joint R & D projects with major partners worldwide. For further information please contact:
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