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!!! Press Release !!! TECHNOLOGY
FOR THE 21ST CENTURY - AIXTRON CO-SPONSORS UNIQUE RESEARCH PROGRAM ON
GAN HIGH POWER ELECTRONICS Aachen/Jülich, February 7th, 2002 - A new semiconductor technology which is likely to affect everyone's life in the next decades is under development in Aachen. Gallium Nitride Semiconductor Material, which has already created a revolution in the lighting technology, will do the same in high power, high frequency applications. Some examples of this are base solutions for mobile communication and high temperature, industrial and utilities power control circuits in automotive applications. Due to its unique properties, this material shall be used to produce transistors or integrated circuits operating at extreme temperatures, at high power levels or at high frequencies. These new semiconductor materials can also be combined on classical silicon wafers using AIXTRON's advanced HeteroWafer™ Technology, leading to significant cost advantages for producers. Within the framework of a German Technology Program, AIXTRON AG and the "Ministerium für Arbeit und Soziales, Qualifikation und Technologie des Landes Nordrhein-Westfalen" will co-sponsor 1 Mio. EUR for the research co-operation project "High Power Electronics with Group III Nitrides". This novel and future oriented model has been launched in April 2000 by the RWTH Aachen (Aachen University of Technology), Research Center Jülich (FZJ) and AIXTRON AG. Joining development efforts between existing scientific and technological potential in the field of semiconductor technology, University, Government and Industrial Research in the region will ensure the efficient use of research funds and will establish a more effective technology transfer from research to industry and consumer products. At the same time, students have the unique possibility of industry-oriented practical and theoretical studies in the field of modern Semiconductor Technology. The project is focused on high-frequency and high-power electronics based on gallium nitride and related compounds. High frequency power transistors and circuits are increasingly needed for mobile communication, radar technology and automotive applications. They must fulfill stringent, technical requirements like RF and microwave performance as well as high temperature operation and ruggedness at higher voltage levels. Since these requirements cannot be met by classical Silicon semiconductor materials, the industry is highly interested in these modern semiconductors. As the leading supplier of semiconductor epitaxial equipment and with an installed base of well over 600 systems worldwide AIXTRON is represented in over 15 countries. The company provides an extensive service and support network for maintenance as well as upgrading of systems. Due to its high level of customer service worldwide, AIXTRON has been rated once more among the 2001 10 BEST in its category in VLSI Research Inc's Customer Satisfaction Survey. In addition AIXTRON's close and reliable partnership with its stakeholders (e.g. customers, suppliers, inventors) is reflected in the inclusion of AIXTRON shares into the Dow Jones Sustainability Index 2001. AIXTRON's many customers include Agere, Alcatel, Anritsu, ATMI, Avalon, AXT, Epson, Honeywell, IQE, ITT, JDS-Uniphase, Kopin, LumiLeds, Mitsubishi, Motorola, Nortel, Optospeed, Osram, Procomp, Samsung, Showa Denko, Sumitomo, Thales, UEC, VPEC as well as numerous Japanese corporations. AIXTRON systems have also been installed in many renowned research institutes worldwide, including CNRS, Fraunhofer Institute, ITRI-OES, JPL, Meijo University, Research Center Jülich, RIKEN, Sandia Nat. Lab, University of Tokyo. AIXTRON is very active in advancing MOCVD technology through collaborations and joint R&D projects with major partners worldwide. For further information please contact:
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