Press Release 

Ruhr-University of Bochum moves into Atomic Vapor Deposition (AVD^®)

Aachen, Germany / Bochum, Germany, 4^th October, 2004 - AIXTRON AG (FSE: AIX; ISIN DE0005066203), a leading provider of equipment for compound semiconductor epitaxy, today announced the sale of a development reactor containing the key components of AIXTRON's Atomic Vapor Deposition (AVD) technology to the Ruhr-University of Bochum, Germany.

The system will be used for the research on new precursors for and physical properties of high-k dielectrics and advanced electrode thin films. The AIX 200FE system will be installed in the clean-room facilities of the Institute for Inorganic Chemistry II under the direction of Professor Dr. Roland A. Fischer and Jr. Prof. Dr. Anjana Devi. The activities of his group are directed at the development of new metal-organic precursors and their properties in different chemical vapor deposition methods. The Ruhr-University and AIXTRON signed a research and demonstration laboratory agreement wherein both parties will cooperate on the development of metal-organic precursors for high-k and electrode materials and the use of these precursors for an AVD thin film deposition process.

The primary applications for high-k dielectrics and advanced electrode materials are CMOS transistors, dynamic memories (DRAMs), and integrated capacitors. High-k materials are expected to replace silicon dioxide as an isolating gate dielectric, and enable higher transistor performance at drastically reduced leakage currents. At the same time, electrode materials are expected to replace poly-silicon as the transistor gate material. It allows further shrinking of the transistor size beyond the 65 nm silicon technology node. Basically the same high-k and electrode materials will be used in future capacitive structures for DRAM's and RF applications. These materials build the required capacitor sizes at smaller dimensions enabling a higher density of the integrated circuits, significantly reducing mass production costs.

The AIX 200FE system features AIXTRON's latest Atomic Vapor Deposition technology for high-k and electrode films on small size wafers for basic research and process development. It includes the precisely controlled TriJet liquid precursor delivery and contactless evaporation system which utilizes a pulsed injection of up to four different metal-organic precursors simultaneously into the system. It is the most flexible CVD precursor delivery component on the market and can also perform a multi-component layer deposition with an in-situ stoichiometry control. AIXTRON successfully uses the same TriJet component in its Tricent production systems for the AVD of high-k, electrode and ferroelectric materials on large silicon wafers.

About AIXTRON

AIXTRON AG (FSE: AIX; ISIN DE0005066203) is a leading provider of equipment for compound semiconductor epitaxy. The Company's products are used by a diverse range of customers worldwide to manufacture advanced semiconductor components such as HBTs, PHEMTs, MESFETs, Lasers, LEDs, Detectors, and VCSELs used in fiber optic communication systems, wireless and mobile telephony applications, optical storage devices, illumination, signaling and lighting, as well as a range of other leading- edge technologies. AIXTRON AG's securities are listed in the Prime Standard market segment of the Frankfurt Stock Exchange and are included both in the TecDAX index and the MSCI World Index. More information about AIXTRON can be found on the Web at www.aixtron.com.

Forward Looking Information
This news release may contain forward-looking statements about the business, financial condition, results of operations and earnings outlook of AIXTRON within the meaning of the "safe harbor" provisions of the United States Private Securities Litigation Reform Act of 1995. Words such as "may," "will," "expect," "anticipate," "contemplate," "intend," "plans," "believe," "continue" and "estimate," and variations of these words and similar expressions, identify these forward-looking statements. These statements are not guarantees of future performance, involve certain risks, uncertainties and assumptions that are difficult to predict, and are based upon assumptions as to future events that may not prove accurate. Therefore, actual outcomes and results may differ materially from what is expressed herein. In any forward-looking statement in which AIXTRON expresses an expectation or belief as to future results, such expectation or belief is expressed in good faith and believed to have a reasonable basis, but there can be no assurance that the statement or expectation or belief will result or be achieved or accomplished. Actual operating results may differ materially from such forward-looking statements and are subject to certain risks, including risks arising from: actual customer orders received by AIXTRON; the extent to which metal-organic chemical vapor deposition, or MOCVD, technology is demanded by the market place; the timing of final acceptance of products by customers; the financial climate and accessibility of financing; general conditions in the thin film equipment market and in the macro-economy; cancellations, rescheduling or delays in product shipments; manufacturing capacity constraints; lengthy sales and qualification cycles; difficulties in the production process; changes in semiconductor industry growth; increased competition; exchange rate fluctuations; availability of government funding; variability and availability of interest rates; delays in developing and commercializing new products; general economic conditions being less favorable than expected; and other factors. The forward-looking statements contained in this news release are made as of the date hereof and AIXTRON does not assume any obligation to (and expressly disclaims any such obligation to) update the reasons why actual results could differ materially from those projected in the forward-looking statements. Any reference to the Internet website of AIXTRON is not an incorporation by reference of such information in this news release, and you should not interpret such a reference as an incorporation by reference of such information.

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© AIXTRON AG, October 4^th, 2004

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