FIRST RESULTS ON GROWTH OF NITRIDE SUPERLATTICES ON AN AIX 200/4 RF-S AT UNIVERSITY OF TOKYO

!!! Press Release !!!

FIRST RESULTS ON GROWTH OF NITRIDE SUPERLATTICES ON AN
AIX 200/4 RF-S AT UNIVERSITY OF TOKYO

Aachen/Tokyo, November 18, 2002 - Scientists at the University of Tokyo have recently presented their first results on the growth of Nitride superlattices at the International Workshop on Nitride Semiconductors (IWN) in Aachen, Germany. The layers were grown on a new AIX 200/4 RF-S MOCVD System installed by the end of 2001, within the framework of a co-operation and demonstration laboratory program between the University of Tokyo and AIXTRON.

Professor Yoshiaki Nakano, Department of Electronic Engineering at the University of Tokyo states: "The start-up was completed smoothly, underlining the outstanding stability and reproducibility of the system. Right after start-up we were able to grow AlN/GaN MQW structures of exceptional quality with this system. Relevant data has already been submitted for publication and will be presented at forthcoming conferences. The AIXTRON platform offers a convincing solution to our rigid requirements with respect to flexibility in GaN process parameters and the extreme hardware specifications for the MOCVD reactor. The excellent results achieved on this AIXTRON system will contribute decisively to our research into the field of inter-subband transition devices."

Based on the extremely successful AIX 200/4 reactor series, the stainless steel version AIX 200/4 RF-S for growth at high temperatures offers high flexibility in the choice of in-situ measurement methods. Numerous optical ports allow for the connection of AIXTRON's innovative EpiTune and Epi-RAS instruments for in-situ monitoring of growth rate, temperature, structure and optical properties of the crystal.

AIXTRON is, as verified by VLSI Research Inc., the world leading supplier of equipment for semiconductor epitaxy. Its equipment is used by a diverse range of customers worldwide to manufacture critical, advanced components such as HBTs, PHEMTs, MESFETs, Lasers, LEDs, Detectors and VCSELs used in fibre optic communications systems, wireless and mobile telephony applications, optical storage devices, illumination, signaling and lighting, as well as a range of other leading edge technologies. AIXTRON AG (FSE: AIX ISIN DE0005066203) is included in the Dow Jones Sustainability Index World and the MSCI World Index.

For further information please contact:

Dr. Claus Ehrenbeck
Head of Investor Relations and
Corporate Communications
AIXTRON AG
Kackertstr. 15 - 17
D-52072 Aachen, Germany
Phone:+49 241 8909 444
Fax: +49 241 8909 445
E-mail: invest@aixtron.com