Aachen, June 25, 2001. As a result of its continuous effort to provide the most elaborated technology to its customers, AIXTRON has reached another breakthrough. With the release of the multiple 4" InP MOCVD technology, now another milestone in terms of throughput and wafer size (5x4", 8x4") has been achieved. "As the III-V industry is preparing the 40 Gbit/s generation of high speed electronic circuits which will be based on InP, it is very important that a reliable MOCVD tool with 4" capacity is available," said Dr. Juergensen, President of AIXTRON AG. "Very soon 4" will be dominating the market as it has happened earlier on with GaAs. In addition to that, we also expect InP based opto electronics to move quickly from 3 to 4inch. AIXTRON has 20 years experience in InP epi technology."

"Every component can be manufactured out of InP material: all modulators, all waveguides, all interconnects," said Igor Trofimov of Qusion, Inc.

"InP is the next generation semiconductor after GaAs," stated Dr. John C.C. Fan, Kopin's president and chief executive officer. "Compared to GaAs HBTs, InP HBTs demonstrate superior speed, operating voltage, power efficiency and thermal properties." KOPIN is currently growing carbon-doped InP HBTs in the AIXTRON organometallic chemical vapor deposition (OMCVD) systems, the preferred technique for large-scale manufacturing. This major breakthrough enables a new generation of high-performance, reliable, cost-effective InP HBT circuits for a wide variety of exciting applications, including 40-gigabit per second (Gb/s) fiber optic circuits (OC 768) and efficient power amplifiers for third-generation wireless phones." "Our proprietary, and patent-pending process overcomes previous difficulties to incorporate sufficient quantities of carbon into InP HBTs, especially by OMCVD. Although beryllium-doped InP HBTs have been grown by molecular beam epitaxy (MBE), carbon-doped HBTs are preferable because carbon is a more stable dopant."