Ausgewählte Publikationen

   Cost of ownership dictates new MOCVD reactor design (PDF, 122kb)
       Compound Semiconductor, August 2005, pp. 25-26

   Modeling and experimental validation of a new gas injector design for III-Nitride growth in the 42x2 inch Planetary Reactor configuration (PDF, 55kb)

   Efficiency optimized 18x3 inch Planetary Reactor for AlGaInP based optoelectronic applications (PDF, 145kb)

   Investigation of triple gas inlet for the growth of InGaN MQW structures in a large production scale 24x2 inch MOCVD reactor (PDF, 84kb)

   Process and reactor design optimization by computational analysis of the MOVPE of III-V compounds in multi-wafer Planetary Reactors (PDF, 40kb)

   Modeling and process design of III-Nitride MOVPE at near-atmospheric pressure in Close Coupled Showerhead and Planetary Reactors (PDF, 32kb)

   Modeling and experimental validation of a new gas injector design in the 42x2" Planetary Reactor configuration (PDF, 173 kb)

   Modeling and process design of III-Nitride MOVPE at near-atmospheric pressure in Close Coupled Showerhead and Planetary Reactors (PDF, 144 kb)

   Growth of InGaN MQW structures in an optimized 24x2 inch Planetary Reactor (PDF, 147kb)

   Methods for industrial scale production of free-standing GaN substrates (PDF, 235kb)