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University of Cambridge Installs Further AIXTRON MOCVD System
Long-term collaboration for growth of 6-inch GaN-on-Si wafers planned AIXTRON SE today announced that the University of Cambridge has successfully commissioned another multi-wafer Close Coupled Showerhead (CCS) MOCVD reactor at its new facility at the Department of Material Science and Metallurgy.
Plessey releases first 6 inch GaN on silicon LEDs
The firm's gallium nitride on silicon LEDS were presented to the Rt. Hon. Vince Cable, MP on his visit to the firm's Plymouth plant Plessey has announced that samples of its GaN on silicon LED products are now available.
AIXTRON leads workpackage production in Graphene Flagship project
AIXTRON SE today announced that it is participating as a key partner in the recently announced European Union (EU) Future Emerging Technology (FET) flagship project “Graphene.
Peking University orders Aixtron CCS system for LED and laser research
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in Q2/2012 China’s Peking University ordered a further Aixtron Close Coupled Showerhead (CCS) reactor with capacity for three 2-inch (3x2”) substrates in a single run.
Transphorm scales up to 200 mm wafers with AIX G5+ GaN-on-Si system from AIXTRON
AIXTRON SE (www.aixtron.com/en) announced that US company Transphorm Inc. is stepping up production of gallium nitride on silicon (GaN-on-Si) with its latest order of AIXTRON’s G5+ MOCVD system, capable of handling five 200 mm (5x8-inch) wafers.
Qingshan Li Appointed as New Lab Director in China
... One year AIXTRON Training and Demonstration Center in Suzhou The new director in Suzhou: Qingshan Li AIXTRON SE today announced that its Training and Demonstration Center in Suzhou, China, has reached its next planning stage.
Qingshan Li appointed director of Process Support at Aixtron China
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that its Training and Demonstration Center in Suzhou, China, has reached the next planning stage.
Aixtron AIX G5+ wins CS Manufacturing Award 2013
The compound semiconductor industry commended the firm's gallium nitride-on-silicon (GaN-on-Si) system. The tool is designed to handle five 200 mm wafers per production run providing high throughput and high yield growth of GaN devices on large area substrates Aixtron SE has announced that it has be
FOREPI Orders AIXTRON’s CRIUS II-L MOCVD Production Systems
AIXTRON SE announced that in the third quarter of 2012 long-term customer Formosa Epitaxy Inc. (FOREPI), Taiwan, placed a new order for multiple CRIUS II-L MOCVD production systems in a 69x2-inch configuration.
New Aixtron GM to head operations in Korea »
Aixtron SE has taken on SukYoung Kim as General Manager of its subsidiary Aixtron Korea Co., Ltd. SukYoung Kim, GM Aixtron Korea Co., Ltd. Kim has been working in the international semiconductor industry in Korea and the USA for many years and most recently held the position of Regional President

